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Gapless superconductivity in Nb thin films probed by terahertz spectroscopy Nature Communications volume 14, Article number: 2737 (2023)

DOI: 10.1038/s41467-023-38422-8

Tunable magnetization steps in mixed valent ferromagnet Eu2CoMnO6 Scientific Reports volume 11, Article number: 9408 (2021)

DOI: 10.1038/s41598-021-88950-w

Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS2 Field Effect Transistors Nano Lett. 2021, 21, 8, 3503–3510

DOI: 10.1021/acs.nanolett.1c00180

Thermomechanical Manipulation of Electric Transport in MoTe2 Advanced Electronic Materials Volume7, Issue4 April 2021 2000823

DOI: 10.1002/aelm.202000823

Capping and gate control of anomalous Hall effect and hump structure in ultra-thin SrRuO3 films Appl. Phys. Lett. 118, 173102 (2021)

DOI: 10.1063/5.0050163

Atomic-layer-confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides SCIENCE ADVANCES 26 Mar 2021 Vol 7, Issue 13

DOI: 10.1126/sciadv.abd7921

Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe2 channel and ferroelectric P(VDF-TrFE) Nano Energy Volume 81, March 2021, 105686

DOI: 10.1016/j.nanoen.2020.105686

Structural Phase Transition and Interlayer Coupling in Few-Layer 1T′ and Td MoTe2 ACS Nano 2021, 15, 2, 2962–2970

DOI: 10.1021/acsnano.0c09162

Thickness dependence of antiferromagnetic phase transition in Heisenberg-type MnPS3 Current Applied Physics Volume 21, January 2021, Pages 1-5

DOI: 10.1016/j.cap.2020.09.017

Tailoring Single- and Double-Sided Fluorination of Bilayer Graphene via Substrate Interactions Nano Lett. 2021, 21, 2, 891–898

DOI: 10.1021/acs.nanolett.0c03237

Spatially dispersing Yu-Shiba-Rusinov states in the unconventional superconductor FeTe0.55Se0.45 Nature Communications volume 12, Article number: 298 (2021)

DOI: 10.1038/s41467-020-20529-x

Kagome van-der-Waals Pd3P2S8 with flat band Scientific Reports volume 10, Article number: 20998 (2020)

DOI: 10.1038/s41598-020-77825-1

Noncollinear antiferromagnetic order in the buckled honeycomb lattice of magnetoelectric Co4Ta2O9 determined by single-crystal neutron diffractio Phys. Rev. B 102, 214404 – Published 2 December 2020

DOI: 10.1103/PhysRevB.102.214404

Origin of temperature-dependent performance of hole-transport-layer-free perovskite solar cells doped with CuSCN Organic Electronics Volume 87, December 2020, 105958

DOI: 10.1016/j.orgel.2020.105958

Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/2D and Oxide/2D TMD Diodes ADVANCED FUNCTIONAL MATERIALS Volume31, Issue9

DOI: 10.1002/adfm.202009436

Electrical joule heating for the isolation of ZnO nanowire channel and subsequent high-performance 1D circuit integration Current Applied Physics Volume 20, Issue 12, December 2020, Pages 1424-1428

DOI: 10.1016/j.cap.2020.09.011

Graphene p-n junction formed on SiC(0001) by Au intercalation Journal of the Korean Physical Society volume 78, 40–44

DOI: 10.1007/s40042-020-00010-0

The 2020 Quantum Materials Roadmap

High-Performance van der Waals Junction Field-Effect Transistors Utilizing Organic Molecule/Transition Metal Dichalcogenide Interface ACS Nano 2020, 14, 11, 15646–15653

DOI: 10.1021/acsnano.0c06509

Engineering ferromagnetic lines in graphene by local oxidation and hydrogenation using nanoscale lithography Journal of Physics D: Applied Physics, Volume 54, Number 7

DOI: 10.1088/1361-6463/abc448

First-principles study of two-dimensional ferroelectrics using self-consistent Hubbard parameters Phys. Rev. B 102, 165157 – Published 30 October 2020

DOI: 10.1103/PhysRevB.102.165157

Proximate Kitaev system for an intermediate magnetic phase in in-plane magnetic fields Phys. Rev. B 102, 140402(R) – Published 6 October 2020

DOI: 10.1103/PhysRevB.102.140402

First-principles study on effects of local Coulomb repulsion and Hund’s coupling in ferromangetic semiconductor CrGeTe3 Journal of Applied Physics 128, 123901 (2020)

DOI: 10.1063/5.0015566

Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure Advanced MaterialsVolume 32, Issue 43 2003567

DOI: 10.1002/adma.202003567

Strongly adhesive dry transfer technique for van der Waals heterostructure 2D Materials, Volume 7, Number 4

DOI: 10.1088/2053-1583/abad0b

Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics ADVANCED MATERIALS Volume32, Issue51

DOI: 10.1002/adma.202002092

Light-Induced Anisotropic Morphological Dynamics of Black Phosphorus Membranes Visualized by Dark-Field Ultrafast Electron Microscopy ACS Nano 2020, 14, 9, 11383–11393, August 11, 2020

DOI: 10.1021/acsnano.0c03644

2D TMD Channel Transistors with ZnO Nanowire Gate for Extended Nonvolatile Memory Applications Volume30, Issue40, October 1, 2020 2004140

DOI: 10.1002/adfm.202004140

Simple Artificial Neuron Using an Ovonic Threshold Switch Featuring Spike-Frequency Adaptation and Chaotic Activity Phys. Rev. Applied 13, 064056 – Published 23 June 2020

DOI: 10.1103/PhysRevApplied.13.064056

Compositional effect in pentagonal layered PdSe2-xSx solid-solutions and their transport properties Scripta Materialia Volume 182, June 2020, Pages 6-10

DOI: 10.1016/j.scriptamat.2020.02.030

Tailoring Single- and Double-sided Fluorination of Bilayer Graphene via Substrate Interactions Nano Lett. 2021, 21, 2, 891–898

DOI: 10.1021/acs.nanolett.0c03237

Tunable Wettability of Graphene through Nondestructive Hydrogenation and Wettability-Based Patterning for Bioapplications Nano Lett. 2020, 20, 8, 5625–5631

DOI: 10.1021/acs.nanolett.9b04548

Symmetry dictated grain boundary state in a two-dimensional topological insulator Nano Lett. 2020, 20, 8, 5837–5843

DOI: 10.1021/acs.nanolett.0c01756

Complementary Type Ferroelectir Memory Transistor Circuits with P- and N- Channel MoTe2 Advanced Electronic Materials Volume6, Issue9 September 2020 2000479

DOI: 10.1002/aelm.202000479

Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel ACS Nano 2020, 14, 9, 12064–12071

DOI: 10.1021/acsnano.0c05393

Anisotropic and nonlinear magnetodielectric effects in orthoferrite ErFeO3 single crystals Scientific Reports volume 10, Article number: 11825 (2020)

DOI: 10.1038/s41598-020-68800-x

Optical phonons of SnSe(1−x)Sx layered semiconductor alloys Scientific Reports volume 10, Article number: 11761 (2020

DOI: 10.1038/s41598-020-68744-2

Coherent many-body exciton in van der Waals antiferromagnet NiPS3 Nature volume 583, pages785–789(2020)

DOI: 10.1038/s41586-020-2520-5

Magnetic structures in the locally inverted interlayer coupling region of a bilayer magnetic system Journal of Magnetism and Magnetic Materials Volume 501, 1 May 2020, 166447

DOI: 10.1016/j.jmmm.2020.166447

Enhanced photo-induced carrier generation efficiency through surface band bending in topological insulator Bi2Se3 thin films by oxidized layer ACS Appl. Mater. Interfaces 2020, 12, 23, 26649–26658

DOI: 10.1021/acsami.0c05165

Polytypism in few-layer gallium selenide Nanoscale, 2020, 12, 8563-8573

DOI: 10.1039/D0NR00165A

Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions Nano Lett. 2020, 20, 4, 2443–2451

DOI: 10.1021/acs.nanolett.9b05162

Tunable rectification in a molecular heterojunction with two-dimensional semiconductors Nature Communications volume 11, Article number: 1412 (2020)

DOI: 10.1038/s41467-020-15144-9

Role of anionic vacancy for active hydrogen evolution in WTe2 Applied Surface Science Volume 515, 15 June 2020, 145972

DOI: 10.1016/j.apsusc.2020.145972

Basal-Plane catalytic activity of layered metallic transition metal ditellurides for the hydrogen evolution reaction Appl. Sci. 2020, 10(9), 3087

DOI: 10.3390/app10093087

Thickness Independent Semiconducting-to-Metallic Conversion in Wafer-Scale Two-Dimensional PtSe2 Layers by Plasma-Driven Chalcogen Defects Engineering ACS Appl. Mater. Interfaces 2020, 12, 12, 14341–14351

DOI: 10.1021/acsami.0c00116

Black phosphorus as a bipolar pseudospin semiconductor Nature Materials volume 19, pages277–281(2020)

DOI: 10.1038/s41563-019-0590-2

Electron-phonon coupling in the ordered phase of Rb on monolayer graphene Current Applied Physics Volume 20, Issue 4, April 2020, Pages 484-488

DOI: 10.1016/j.cap.2020.01.010

Tungsten Dichalcogenide Nanoflake/InGaZnO Thin‐Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits Advanced Electronic Materials Volume6, Issue5 May 2020 2000026

DOI: 10.1002/aelm.202000026

Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance Nature Communications volume 11, Article number: 1574 (2020)

DOI: 10.1038/s41467-020-15419-1

Metal-electrode-free inverted organic photovoltaics using electrospray-deposited PEDOT: PSS and spin-coated HAT-CN exciton blocking layer Current Applied Physics Volume 20, Issue 2, February 2020, Pages 277-281

DOI: 10.1016/j.cap.2019.11.013

Universal Oriented van der Waals Epitaxy of 1D Cyanide Chains on Hexagonal 2D Crystals ADVANCED SCIENCE Volume7, Issue4 February 19, 2020 1900757

DOI: 10.1002/advs.201900757

Fabrication and Imaging of Monolayer Phosphorene with Preferred Edge Configurations via Graphene-Assisted Layer-by-Layer Thinning Nano Lett. 2020, 20, 1, 559–566

DOI: 10.1021/acs.nanolett.9b04292

Metal-electrode-free inverted organic photovoltaics using electrospray-deposited PEDOT: PSS and spin-coated HAT-CN exciton blocking layer Current Applied Physics Volume 20, Issue 2, February 2020, Pages 277-281

DOI: 10.1016/j.cap.2019.11.013

Self-Powered Visible–Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes ACS Appled Materials & Interfaces 2020, 12, 9, 10858–10866

DOI: 10.1021/acsami.9b22288

Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free BaxSr1‐xTiO3 and MoS2 Channel Advanced Functional materials Volume30, Issue7 February 12, 2020 1908210

DOI: 10.1002/adfm.201908210

Two-dimensional semiconducting materials for electronic and optoelectronic applications: Potential and challenge 2D Materials, Volume 7, Number 2 Two-dimensional semiconducting materials for electronic and optoelectronic applications: Potential and challenge

DOI: 10.1088/2053-1583/ab6267

Directed self-assembly of a helical nanofilament liquid crystal phase for use as structural color reflectors NPG Asia Materials volume 11, Article number: 45 (2019)

DOI: 10.1038/s41427-019-0146-6

ZnO: Ga-graded ITO electrodes to control interface between PCBM and ITO in planar perovskite solar cells Science and Technology of Advanced Materials Volume 20, 2019 - Issue 1

DOI: 10.1080/14686996.2019.1599695

Unveiling the origin of performance reduction in perovskite solar cells with TiO2 electron transport layer: Conduction band minimum mismatches and chemical interactions at buried interface Applied Surface Science Volume 495, 30 November 2019, 143490

DOI: 10.1016/j.apsusc.2019.07.232

All-2D ReS2 transistors with split gates for logic circuitry Scientific Reports volume 9, Article number: 10354 (2019)

DOI: 10.1038/s41598-019-46730-7

Multifunctional Two-Dimensional PtSe2-Layer Kirigami Conductors with 2000% Stretchability and Metallic-to-Semiconducting Tunability Nano Lett. 2019, 19, 11, 7598–7607 Publication Date:June 17, 2019

DOI: 10.1021/acs.nanolett.9b01726

Horizontal-to-Vertical Transition of 2D Layer Orientation in Low-Temperature CVD-Grown PtSe2 and Its Influences on Electrical Properties and Device Applications ACS Appl. Mater. Interfaces 2019, 11, 14, 13598–13607

DOI: 10.1021/acsami.9b01078

Horizontal-to-Vertical Transition of 2D Layer Orientation in Low-Temperature CVD-Grown PtSe2 and Its Influences on Electrical Properties and Device Applications ACS Appl. Mater. Interfaces 2019, 11, 14, 13598–13607

DOI: 10.1021/acsami.9b01078

Phonon-Assisted Carrier Transport through Lattice-Mismatched Interface NPG Asia Materials volume 11, Article number: 14 (2019)

DOI: 10.1038/s41427-019-0113-2

Electrically Conducting and Mechanically Strong Graphene-Polylactic Acid Composites for 3D Printing ACS Appl. Mater. Interfaces 2019, 11, 12, 11841–11848

DOI: 10.1021/acsami.9b03241

Molecular flux distribution from the thermal evaporation source using Monte Carlo method: The importance of interparticle collision Current Applied Physics Volume 19, Issue 11, November 2019, Pages 1233-1237

DOI: 10.1016/j.cap.2019.08.010

Raman spectroscopy of two-dimensional magnetic van der Waals materials Nanotechnology, Volume 30, Number 45

DOI: 10.1088/1361-6528/ab37a4

Antiferromagnetic ordering in van der Waals 2D magnetic material MnPS3 probed by Raman spectroscopy 2D Materials, Volume 6, Number 4

DOI: 10.1088/2053-1583/ab27d5

Complete determination of the crystallographic orientation of ReX2 (X = S, Se) by polarized Raman spectroscopy Nanoscale Horiz., 2020,5, 308-315

DOI: 10.1039/C9NH00487D

Advanced Multifunctional Field Effect Devices Using Common Gate for Both 2D Transition‐Metal Dichalcogenide and InGaZnO Channels ADVANCED ELETRONIC MATERIALS Volume5, Issue12 December 2019 1900730

DOI: 10.1002/aelm.201900730

Direct imaging of structural disordering and heterogeneous dynamics of fullerene molecular liquid Nature Communications volume 10, Article number: 4395 (2019)

DOI: 10.1038/s41467-019-12320-4

Hybrid catalyst with monoclinic MoTe2 and platinum for efficient hydrogen evolution APL Materials 7, 071118 (2019

DOI: 10.1063/1.5094957

Moire phonons in twisted bilayer graphene Phys. Rev. B 100, 075416 – Published 12 August 2019

DOI: 10.1103/PhysRevB.100.075416

Trap-assisted high responsivity of a phototransistor using bi-layer MoSe2 grown by molecular beam epitaxy Applied Surface Science Volume 494, 15 November 2019, Pages 37-45

DOI: 10.1016/j.apsusc.2019.07.116

All-2D ReS2 transistors with split gates for logic circuitry Scientific Reports volume 9, Article number: 10354 (2019)

DOI: 10.1038/s41598-019-46730-7

Multifunctional Two-Dimensional PtSe2-Layer Kirigami Conductors with 2000% Stretchability and Metallic-to-Semiconducting Tunability Nano Lett. 2019, 19, 11, 7598-7607

DOI: 10.1021/acs.nanolett.9b01726

Unveiling the origin of performance reduction in perovskite solar cells withTiO2electron transport layer: Conduction band minimum mismatches andchemical interactions at buried interface Applied Surface Science Volume 495, 30 November 2019, 143490

DOI: 10.1016/j.apsusc.2019.07.232

Direct p-doping of Li-TFSI for efficient hole injection: Role of polaronic level in molecular doping Applied Surface Science Volume 480, 30 June 2019, Pages 565-571

DOI: 10.1016/j.apsusc.2019.02.248

Electronic structure of Ba(OH)2 interface in inverted organic photovoltaics: Improved electron transport by charged state of C60 Applied Surface Science Volume 476, 15 May 2019, Pages 435-441

DOI: 10.1016/j.apsusc.2019.01.093

Electronic Structure of Nonionic Surfactant-Modified PEDOT:PSS and Its Application in Perovskite Solar Cells with Reduced Interface Recombination ACS Appl. Mater. Interfaces 2019, 11, 18, 17028-17034

DOI: 10.1021/acsami.9b01545

In-plane band bending in hexagonal monolayer WS2 by edge polarization Phys. Rev. B 99, 205427

DOI: 10.1103/PhysRevB.99.205427

Strong magnetoelectric coupling in mixed ferrimagnetic-multiferroic phases of a double perovskite Scientific Reports volume 9, Article number: 5456 (2019)

DOI: 10.1038/s41598-019-41990-9

Enhanced Exchange Bias Effect by Modulating Relative Ratio of Magnetic Ions in Y2Co2-xMnxO6 (x=ˆ1.0–1.9) Volume13, Issue7 July 2019 1900008

DOI: 10.1002/pssr.201900008

Quasicrystalline electronic states in 30∘ rotated twisted bilayer graphene Phys. Rev. B 99, 165430 (2019)

DOI: 10.1103/PhysRevB.99.165430

A new family of two-dimensional crystals: open framework T3X (T=C, Si, Ge, Sn; X=0, S, Se, Te) compounds with tetrahedral bonding Nano Lett. 2019, 19, 4, 2694-2699

DOI: 10.1021/acs.nanolett.9b00668

Closing the Surface Bandgap in Thin Bi2Se3/ Graphene Heterostructures ACS Nano 2019, 13, 4, 3931-3939

DOI: 10.1021/acsnano.8b07012

P-N junction Diode Using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices ACS Nano 2019, 13, 2, 1683-1693

DOI: 10.1021/acsnano.8b07730

Single-crystalline Cu2O thin films of optical quality as obtained by the oxidation of single-crystal Cu thin films at low temperature APL Materials 7, 031115 (2019)

DOI: 10.1063/1.5087114

Topological properties controlled by light Nature 565, 32-33 (2019)

DOI: 10.1038/d41586-018-07851-7

Nonlinear magnetodielectric effect of disordered perovskite HoCr0.5Fe0.5O3: Role of magnetic rare-earth ions Volume 785, 15 May 2019

DOI: 10.1016/j.jallcom.2019.01.291

Intrinsic Correlation between Electronic Structure and Degradation: From Few‐Layer to Bulk Black Phosphorus Volume58, Issue12 March 18, 2019

DOI: 10.1002/anie.201811743

Self-Powered Chemical Sensing Driven by Graphene-Based Photovoltaic Heterojunctions with Chemically Tunable Built-In Potentials Volume15, Issue2 January 11, 2019 1804303

DOI: 10.1002/smll.201804303

Suppression of magnetic ordering in XXZ-type antiferromagnetic monolayer NiPS3 Nature Communications volume 10, Article number: 345 (2019)

DOI: 10.1038/s41467-018-08284-6

Davydov splitting and polytypism in few-layer MoS2 2D Materials, Volume 6, Number 1 Published 17 October 2018

DOI: 10.1088/2053-1583/aae61c/meta

Bulk properties of the van derWaals hard ferromagnet VI3 Phys. Rev. B 99, 041402(R) – Published 7 January 2019

DOI: 10.1103/PhysRevB.99.041402

Integrated advantages from perovskite photovoltaic cell and 2D MoTe2 transistor towards self-power energy harvesting and photosensing Nano Energy Volume 63, September 2019, 103833

DOI: 10.1016/j.nanoen.2019.06.029

Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS2 and p-MoTe2 Transistors Nano Lett. 2019, 19, 4, 2456-2463 Publication Date:March 11, 2019

DOI: 10.1021/acs.nanolett.9b00019

Monolayer MoS 2 field-effect transistors patterned by photolithography for active matrix pixels in organic light-emitting diodes npj 2D Materials and Applications volume 3, Article number: 9 (2019)

DOI: 10.1038/s41699-019-0091-9

Impact of H‐Doping on n‐Type TMD Channels for Low‐Temperature Band‐Like Transport Small Volume15, Issue38 September 18, 2019 1901793

DOI: 10.1002/smll.201901793

Seamless MoTe2 Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection Advanced Optical Materials Volume7, Issue19 October 4, 2019 1900768

DOI: 10.1002/adom.201900768

Antiferromagnet-Based Spintronic Functionality by Controlling Isospin Domains in a Layered Perovskite Iridate Volume30, Issue52 December 27, 2018 1805564

DOI: 10.1002/adma.201805564

Anisotropic magnetic properties and giant rotating magnetocaloric effect in double-perovskite Tb2CoMnO6 Phys. Rev. B 98, 174424 – Published 19 November 2018

DOI: 10.1103/PhysRevB.98.174424

Direct Thermal Growth of Large Scale Cl-doped CdTe Film for Low Voltage High Resolution X-ray Image Sensor Scientific Reports volume 8, Article number: 14810 (2018)

DOI: 10.1038/s41598-018-33240-1

High-Performance 2D MoS2 Phototransistor for Photo Logic Gate and Image Sensor ACS Photonics 2018, 5, 12, 4745-4750

DOI: 10.1021/acsphotonics.8b01049

Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides npj 2D Mater Appl 2, 37 (2018)

DOI: 10.1038/s41699-018-0082-2

2D WSe2/MoS2 van der Waals heterojunction photodiode for visible-near infrared broadband detection Appl. Phys. Lett. 113, 163102 (2018)

DOI: 10.1063/1.5042440

Fully Transparent p-MoTe2 2D Transistors Using Ultrathin MoOx/Pt Contact Media for Indium-Tin-Oxide Source/Drain ADVANCED FUNCTIONAL MATERIALS Volume28, Issue39 September 26, 2018 1801204

DOI: 10.1002/adfm.201801204

Interface engineering for a stable chemical structure of oxidized-black phosphorus via self-reduction in AlOx atomic layer deposition Nanoscale, 2018,10, 22896-22907

DOI: 10.1039/C8NR06652C

Tuning of Topological Dirac States via Modification of van der Waals Gap in Strained Ultrathin Bi2Se3 Films J. Phys. Chem. C 2018, 122, 41, 23739-23748 September 28, 2018

DOI: 10.1021/acs.jpcc.8b06296

Evolution of the broadband optical transition in large-area MoSe2 Phys. Rev. B 97, 075433

DOI: 10.1103/PhysRevB.97.075433

Direct Thermal Growth of Large Scale Cl-doped CdTe Film for Low Voltage High Resolution X-ray Image Sensor Scientific Reports, volume 8, Article number: 14810 (2018)

DOI: 10.1038/s41598-018-33240-1

2D MoSe2 Transistor with Polymer-Brush/Channel Interface Advanced Materials Interfaces Volume5, Issue19, October 9, 2018, 1800812

DOI: 10.1021/am508535x

Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy ACS Appl Mater Interfaces. 2018 Jun 20;10(24):20213-20218

DOI: 10.1021/acsami.8b04056

Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact Nano Lett. 2018 Mar 14;18(3):1937-1945

DOI: 10.1021/acs.nanolett.7b05338

Charge-Transfer-Induced p‑Type Channel in MoS2 Flake Field Effect Transistors ACS Appl. Mater. Interfaces, 2018, 10 (4), pp 4206–4212

DOI: 10.1021/acsami.7b15863

Polymer/oxide bilayer dielectric for hysteresis minimized 1 V operating 2D TMD transistors RSC Adv., 2018, 8, 2837-2843

DOI: 10.1039/C7RA12641G

One-Dimensional Assembly on Two-Dimensions: AuCN Nanowire Epitaxy on Graphene for Hybrid Phototransistors Nano Lett., 2018, 18 (10), pp 6214–6221

DOI: 10.1021/acs.nanolett.8b02259

Low-Frequency Raman Spectroscopy of Few-Layer 2H-SnS2 Scientific Reportsvolume 8, Article number: 10194 (2018)

DOI: 10.1038/s41598-018-28569-6

Variation of photoluminescence spectral line shape of monolayer WS2 Current Applied Physics Volume 18, Issue 8, August 2018, Pages 941-945

DOI: 10.1016/j.cap.2018.05.007

Correlational Effects of the Molecular-Tilt Configuration and the Intermolecular van der Waals Interaction on the Charge Transport in the Molecular Junction Nano Lett., 2018, 18 (7), pp 4322–4330

DOI: 10.1021/acs.nanolett.8b01294

Synaptic barristor Based on Phase-Engineered 2D Heterostructures Advanced Materials, Volume30, Issue35 August 29, 2018 1801447

DOI: 10.1002/adma.201801447

Magic Clusters of MoS2 by Edge S2 Interdimer Spacing Modulation J. Phys. Chem. Lett., 2018, 9 (10), pp 2697–2702

DOI: 10.1021/acs.jpclett.8b00689

Dirac electrons in a dodecagonal graphene quasicrystal Science 28 Jun 2018 1804.04261.pdf

DOI: 10.1126/science.aar8412

Enhanced Thermoelectric Properties in a New Silicon Crystal Si24 with Intrinsic Nanoscale Porous Structure NANO LETTERS, 2018

DOI: 10.1021/acs.nanolett.8b01176

A new series of two-dimensional silicon crystals with versatile electronic properties 2D Materials, Volume 5, Number 2 , 2018

DOI: 10.1088/2053-1583/aaac9f

Holstein polaron in a valley-degenerate two-dimensional semiconductor. Nature Materials volume 17, pages676–680 (2018) 1805.11198.pdf

DOI: 10.1038/s41563-018-0092-7

Enhancing the Performance of Inverted Organic Photovoltaics Using Cathode Interlayers Based on Solution‐Processable Tetrabutylammonium Halides Physica Status Solidi - Rapid Research Letters, Volume 11, Issue number 10, Article number 1700250

DOI: 10.1002/pssr.201700250

In-plane magnetic anisotropy in strontium iridate Sr2IrO4 Physical Review B, Volume 96, Issue number 15, Article number 155102

DOI: 10.1103/PhysRevB.96.155102

Giant Anisotropic Magnetocaloric Effect in Double-perovskite Gd2CoMnO6 Single Crystals Scientific Reports, Volume 7, Issue number 1, Article number 16099

DOI: 10.1038/s41598-017-16416-z

Excitonic resonance effects and Davydov splitting in circularly polarized Raman spectra of few-layer WSe2 2D Materials, Volume 4, Number 4

DOI: 10.1088/2053-1583/aa8312

Characterization of Rotational Stacking Layers in Large-Area MoSe2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon ACS Appl. Mater. Interfaces 2017, 9, 36, 30786-30796

DOI: 10.1021/acsami.7b05475

Two-Dimensional Dirac Fermions Protected by Space-Time Inversion Symmetry in Black Phosphorus Phys. Rev. Lett. 119, 226801 (2017)

DOI: 10.1103/PhysRevLett.119.226801

Charge Transport in 2D DNA Tunnel Junction Diodes Small. 2017 Dec;13(48).

DOI: 10.1002/smll.201703006

Unraveling the Charge Extraction Mechanism of Perovskite Solar Cells Fabricated with Two-Step Spin Coating: Interfacial Energetics between Methylammonium Lead Iodide and C60 J. Phys. Chem. Lett., 2017, 8 (21), pp 5423–5429

DOI: 10.1021/acs.jpclett.7b02562

Mixed-Dimensional 1D ZnO–2D WSe2 van der Waals Heterojunction Device for Photosensors Advanced Functional Materials, volume27, Article number:1703822

DOI: 10.1002/adfm.201703822

Strain-shear coupling in bilayer MoS2 NATURE COMMUNICATIONS, v.8, no.1, pp.1370 -

DOI: 10.1038/s41467-017-01487-3

Characterization of Rotational Stacking Layers in Large-Area MoSe2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon ACS Appl. Mater. Interfaces, 2017, 9 (36), pp 30786–30796

DOI: 10.1021/acsami.7b05475

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